Typical Electrical Characteristics (continued)
N)
DS
25
20
V DS = 5V
T J = -55°C
100
60
30
R
(O
Lim
it
1 0 0
10μ
μs
s
25°C
1m
s
10
0m
15
10
125°C
10
5
V GS = 5V
10
DC
m
s
s
R
=2.2 C/W
5
2
1
SINGLE PULSE
o
θ JC
T C = 25°C
0
0
5
10
15
20
25
0.5
1
3
5
10
20
40
60
80
I D , DRAIN CURRENT (A)
Figure 13. Transconductance Variation with Drain
Current and Temperature .
1
V DS , DRAIN-SOURCE VOLTAGE (V))
Figure 14. Maximum Safe Operating Area .
0.5
D = 0.5
θ JC
0.3
0.2
0.2
0.1
P(pk)
R θ JC (t) = r(t) * R θ JC
R =2.2 °C/W
0.1
0.05
0.02
t 1
t 2
= P * R θ JC (t)
0.05
0.03
0.01
Single Pulse
T -T
J C
Duty Cycle, D = t 1 /t 2
0.1
0.5
1
10
100
1000
3000
10000
t
,TIME (ms)
1
Figure 15. Transient Thermal Response Curve.
NDP5060L Rev.A
相关PDF资料
NDB6060 MOSFET N-CH 60V 48A TO-263AB
NDB7060 MOSFET N-CH 60V 75A D2PAK
NDC7001C MOSFET N+P 60V 340MA SSOT6
NDC7002N_SB9G007 MOSFET N-CH DUAL 50V 6-SSOT
NDC7003P MOSFET 2P-CH 60V 340MA SSOT6
NDD03N50ZT4G MOSFET N-CH 500V 2.6A DPAK
NDD04N50Z-1G MOSFET N-CH 500V 3A IPAK
NDD05N50ZT4G MOSFET N-CH 500V 5A DPAK
相关代理商/技术参数
NDB508A 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor
NDB508AE 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor
NDB508B 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor
NDB508BE 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor
NDB510A 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor
NDB510AE 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor
NDB510B 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor
NDB510BE 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor